TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of two new S1-Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters from December 26. Thanks to proprietary Insulated Gate Bipolar Transistor (IGBT) devices and insulation structures, the new modules offer excellent reliability and low power loss and thermal resis